发明名称 |
SUB-NANOMETER OVERLAY, CRITICAL DIMENSION, AND LITHOGRAPHY TOOL PROJECTION OPTIC METROLOGY SYSTEMS BASED ON MEASUREMENT OF EXPOSURE INDUCED CHANGES IN PHOTORESIST ON WAFERS |
摘要 |
A method of processing a substrate on which a layer of photoresist has been applied, the method involving: exposing the layer of photoresist to patterned radiation to generate exposure-induced changes in the layer of photoresist which form patterns having one or more features; and before developing the exposed photoresist, interferometrically obtaining measurements of the pattern in the exposed layer of photoresist for determining locations of the one or more features of the pattern.
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申请公布号 |
WO2006023612(A3) |
申请公布日期 |
2006.12.28 |
申请号 |
WO2005US29339 |
申请日期 |
2005.08.18 |
申请人 |
ZETETIC INSTITUTE;HILL, HENRY, A. |
发明人 |
HILL, HENRY, A. |
分类号 |
G01B11/02 |
主分类号 |
G01B11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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