| 摘要 |
A method for making a thin film transistor, TFT, ( 306 ) on a substrate includes a photolithographic process step of patterning three layers of materials to form a TFT ( 306 ) and to form a bridging structure ( 308 ) crossing over a TFT gate bus-line conductor ( 202 ) at a cross over region; followed by patterning a conductor metal to form a TFT source electrode terminal ( 404 ) and a TFT drain electrode terminal ( 402 ), and to comprise a continuous data bus-line ( 206 ) extending over the bridging structure ( 308 ). |
