| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having a through electrode capable of achieving miniaturization, a density increase and acceleration in speed at a low cost by improving a method of forming a through electrode on a silicon substrate. <P>SOLUTION: A through-hole 36 passing through the silicon substrate 31 is formed, a first metal layer 39 is formed from one surface side of the substrate, a protective tape 40 is stuck to one surface of the substrate, and the first metal layer is turned to a power feeding layer. Electrolytic plating is executed with a second metal 42 from the other surface of the substrate, the through-hole is filled with the second metal, and the through electrode is formed. The protective tape 40 is peeled off, and also the first metal layer 39 in a region other than an electrode peripheral part is removed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
