| 摘要 |
PROBLEM TO BE SOLVED: To achieve the microfabrication of cells in a ferroelectric storage device. SOLUTION: This ferroelectric storage device is provided with a transistor 50 formed on a substrate 10 and a ferroelectric capacitor formed at the upper part through a first inter-layer film 60, and arranged so that a direction connecting electrodes 100 can follow the channel lengthwise direction of the transistor 50. A groove configured of a sacrificial film is used when forming a ferroelectric film 90, so that the microfabrication of the ferroelectric capacitor can be attained by setting a distance between electrodes 100 of the capacitor as not more than working dimensions by lithography. COPYRIGHT: (C)2007,JPO&INPIT
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