| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method of a semiconductor substrate which can control a watermark even if cleaning is completed using a sulfuric acid after the cleaning using a hydrogen fluoride. SOLUTION: The cleaning method of the semiconductor substrate comprises a first step (S1, S2) for cleaning the silicon substrate with the rare hydrofluoric acid; a second step (S3, S4) for forming a chemical oxide film using hydrogen peroxide water on the substrate from which the oxide film is removed; a third step (S5) for removing, by spin dry, water remaining on the surface of substrate on which the chemical oxide film is formed; and a fourth step (S6) for cleaning the surface of the substrate from which water has been removed with the hydrogen peroxide water. In this case, the second step for covering the Si surface exposed by the rare hydrofluoric acid of the first step with the chemical oxide film and the third step for removing water on the surface are added between the first and the fourth steps which have been conducted in a related art. Accordingly, control for the generation of the watermark can be performed by a continuous processes by avoiding a resolution of Si into water and heat generation by the mixture of the sulfuric acid hydrogen peroxide water and water. COPYRIGHT: (C)2007,JPO&INPIT
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