| 摘要 |
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a gate insulating layer, a gate electrode, an oxide layer, and sidewalls. The gate insulating layer is formed on the substrate. The gate electrode includes an upper layer and a lower layer stacked on the gate insulating layer. The oxide layer is formed on the gate electrode. The lower layer and the upper layer can have different oxidation rates. The sidewalls are formed on the oxide layer.
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