| 摘要 |
A wafer processing device for use in semiconductor wafer processing applications as an electrostatic chuck comprises a graphite substrate (1) and at least one electrode pattern (3) , wherein the grooves in the electrode pattern are filled up with insulating material (2) comprising at least one of a nitride, carbide, carbonitride or oxynitride, or combination thereof , of at least one element selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and rare earth metals, a combination thereof, forming a first substantially planar surface. This first substantially planar surface is coated with at least a semiconducting layer (4) comprising at least one of a nitride, carbide, carbonitride or oxynitride or combination thereof of at least one element selected from a group consisting of B, A, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or a combination thereof, forming a second substantially planar surface, which is outwardly exposed to support said wafer. |
