| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting type semiconductor laser for preventing electrostatic damage effectively. SOLUTION: The surface emitting type semiconductor laser 1000 comprises a luminous section 100; a commutation section 200; a first conductive layer 300 for electrically connecting an upper mirror layer 140 and an upper semiconductor layer 270; and a second conductive layer 400 for electrically connecting a lower mirror layer 120 and a lower semiconductor layer 250. The commutation section 200 is electrically connected in parallel with the luminous section 100 by the first and second conductive layers 300, 400 and has a commutation operation in a direction opposite to the luminous section 100. The first conductive layer 300 includes a first land 340. The second conductive layer 400 includes second and third lands 440, 450, is extended from the direction of the second land 440 and is electrically connected to a first region 252 in the lower semiconductor layer 250, and is extended from the direction of the third land 450 and is electrically connected to a second region 254 in the lower semiconductor layer 250. COPYRIGHT: (C)2007,JPO&INPIT
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