发明名称 POLISHING COMPOSITION AND POLISHING METHOD
摘要 The present invention aims to improve the polishing rate during the polishing process of semiconductor substrates, hard disk substrates or the like by using a polishing composition containing silica particles, water, a basic substance and an inorganic salt, and by a polishing method using such a polishing composition. This polishing composition can be produced by mixing silica particles, water, a basic substance and an inorganic salt, and it is also obtained by adding an inorganic salt into a conventionally known alkaline polishing composition containing silica particles. As the inorganic salt, there is used an alkali metal salt or an ammonium salt such as KCl, K 2SO4, KNO3, NaCl, Na2SO4, NaNO3, NH4Cl, NH4NO3 and (NH4)2SO4. A polishing composition, wherein silica particles do not agglomerate when an inorganic salt is added, can improve the polishing rate significantly.
申请公布号 KR20060135028(A) 申请公布日期 2006.12.28
申请号 KR20067021592 申请日期 2006.10.18
申请人 TYTEMN CORPORATION;YOSHIDA KAZUAKI 发明人 YOSHIDA KAZUAKI
分类号 C09K3/14;B24B37/00;C09G1/02;H01L21/304;H01L21/306 主分类号 C09K3/14
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