| 摘要 |
A method for fabricating a semiconductor device is provided to improve a contact force between a metal interconnection and a drain contact plug by forming an adhesive layer on the drain contact plug. A substrate with a first interlayer dielectric having a first contact hole is prepared, and a first contact plug is formed in the first contact hole. The first contact plug is recessed to expose a part of the contact hole. An adhesive layer is formed on the first contact plug. The first interlayer dielectric is etched to form a second contact hole. A barrier film(122) is deposited along a coverage formed on the second contact hole. A second contact plug is formed in the second contact hole. A second interlayer dielectric is formed on the entire surface of the substrate, and is etched to expose the second contact plug and the adhesive layer. A metal interconnection(125) is formed in the second interlayer dielectric.
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