| 摘要 |
PROBLEM TO BE SOLVED: To obtain a solid state imaging device comprising an intra-layer lens between a top lens and a photoelectric conversion device capable of efficiently condensing light on the photoelectric conversion device, even when the light is incident obliquely. SOLUTION: The solid state imaging device 1 comprises the photoelectric conversion device 11 arranged on a semiconductor substrate 10, a light-shielding layer 13, a second protective film 17, the intra-layer lens 20 formed on the second protective film 17 correspondingly to the location wherein the photoelectric conversion device 11 is formed, a surface planarizing layer 30, and the top lens 40 formed on the surface planarizing layer 30 correspondingly to the location wherein the photoelectric conversion device 11 is formed. The intra-layer lens 20 is constructed of a material having a refractive index equal or nearly equal to that of the surface planarizing layer 30, and is constructed of a convex lens having an upwardly convex lens-shape and a side wall constructed of a material having a refractive index larger than that of the convex lens portion and covering around the side face of the convex lens portion. COPYRIGHT: (C)2007,JPO&INPIT
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