发明名称 ANISOTROPIC ETCHANT COMPOSITION USED FOR SILICON MICROFABRICATION AND ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an etchant composition having a high silicon etching speed and capable of reducing a silicon etching process time while maintaining etching characteristics such as an etching speed ratio depending on crystal surfaces and smoothness of an etching surface in silicon etching, and an etching method of silicon employing this etchant composition. SOLUTION: The etchant composition used for silicon microfabrication contains inorganic alkali compound and hydroxylamines. The inorganic alkali compound is at least one kind selected from among sodium hydroxide, potassium hydroxide, ammonia and hydrazine. The hydroxylaminesis is at least one kind selected from among hydroxylamine, hydroxylamine sulfate, hydroxylamine chloride, hydroxylamine oxalate, dimethyl hydroxylamine hydrochloride and hydroxylamine phosphate. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006351813(A) 申请公布日期 2006.12.28
申请号 JP20050175793 申请日期 2005.06.15
申请人 MITSUBISHI GAS CHEM CO INC 发明人 YAMADA KENJI;AZUMA TOMOYUKI
分类号 H01L21/308;C23F1/32 主分类号 H01L21/308
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