| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device having a stable structure in which parasitic capacitance is low between interconnect lines. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a wiring structure of a conductive material being buried in a first insulator, a step for exposing the wiring structure by removing the first insulator, a step for forming a second insulator to bury the wiring structure, a step for forming a cap film on the second insulator, and a step for removing the second insulator. COPYRIGHT: (C)2007,JPO&INPIT
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