| 摘要 |
PURPOSE:To contrive to improve overlight characteristics typified by high-speed crystallization characteristics and characteristics of easily becoming amorphous by forming a recording layer for reversibly phase-changing between crystal and amorphous phases according to conditions of applied energy from an alloy with a specific composition including In, Sb and Te. CONSTITUTION:A recording layer 3 is an alloy composed of indium(In), antimony(Sb) and tellurium(Te) according to a composition formula (In(100-X/100 SbX/100)100-YTeY (in which X, Y are 35<=X<=45 and 25<=Y<=40). Therefore, while rapidly crystallizing characteristics possessed by In100-ZSbZ (in which Z is 30<=Z<=50) are made the best use of, it is possible to obtain characteristics of easily becoming amorphous of tellurium. Light beam is applied to the recording layer 3 while energy conditions of the light beam are hanged so that a phase pattern composed of the arrangement of crystal phases 8 and amorphous phases 7 is formed. Then, this phase pattern is regarded as data of binary code so that information can be recorded in a recording layer 2. |
