Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element

摘要

The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi₂O₂)A_m-1B_mO_3m+1, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb. A flux layer, containing a composition satisfying the inequality 02O₃<2 and/or 0<=TIO/BI₂O₃<7/6 on a molar basis is deposited on a wafer and a single-crystalline thin-film is then deposited on the flux layer placed on the wafer. A melt of a composition which contains raw materials and a flux and which satisfies the above inequality is prepared and the melt is cooled such that a single crystal is grown. A CuO flux layer is deposited on a wafer and Bi-Ti-O is supplied to the flux layer using a Bi₆Ti₃O₁₂, Bi₇Ti₃O₁₂, or Bi₈Ti₃O₁₂ target of which the Bi content is greater than that of an object film such that a Bi₄Ti₃O₁₂ single-crystalline thin-film is formed above the wafer.