| 摘要 |
A complementary metal oxide semiconductor (CMOS) image sensor capable of improving photosensitivity and a signal to noise ratio and a method for fabricating the same are provided. An image sensor for embodying the colors of red, green and blue includes: a plurality of photodiodes formed on a substrate and collecting light incident to different unit pixels; a silicon oxide layer formed on the plurality of photodiodes; a silicon nitride layer formed on the silicon oxide layer, wherein the silicon nitride layer is formed in a single layer in unit pixels of green and blue and split into two layers on an upper portion of the unit pixel of red; and a plurality of microlenses formed on portions of the silicon nitride layer corresponding to the respective photodiodes.
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