MULTILAYERD SUBSTRATE OBTAINED VIA WAFER BONDING FOR POWER APPLICATIONS
摘要
<p>A multi-layer semiconductor device utilizes the good thermal and electrical properties of a polycrystalline substrate with the electrical properties of single crystal film transferred via wafer bonding. The device structure includes a polycrystalline, e.g., silicon carbide substrate, which was polished. A planarization layer of silicon is formed on the surface, followed by chemical mechanical polishing. The substrate is then bonded to either a bulk silicon wafer or a silicon-on-insulator (SOI) wafer. The silicon (SOI) wafer is thinned to the desired thickness.</p>
申请公布号
WO2006138422(A1)
申请公布日期
2006.12.28
申请号
WO2006US23244
申请日期
2006.06.14
申请人
NORTHROP GRUMMAN CORPORATION;AUGUSTINE, GODFREY;HARTMAN, JEFFREY, D.;ELVEY, ERICA, C.;TITTEL, PAUL, A.
发明人
AUGUSTINE, GODFREY;HARTMAN, JEFFREY, D.;ELVEY, ERICA, C.;TITTEL, PAUL, A.