| 摘要 |
A semiconductor device is provided to prevent leak current from being generated by forming an end of a gate electrode on an insulation layer ticker than a gate insulation layer. A semiconductor device includes a semiconductor layer(10), a transistor formed on the semiconductor layer and having a gate insulation layer(104) and gate electrodes(106,126), an interlayer dielectric(40) formed on the transistor, and an electrode pad(42) formed on the interlayer dielectric and superposed on a portion of the gate electrode. The transistor has an insulation layer formed under ends of the gate electrodes to have a thickness thicker than the gate insulation layer. |
