RECTIFIER ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a rectifier element capable of improving breakdown voltage while reducing stationary loss, and a manufacturing method thereof. SOLUTION: This rectifier element 10 includes an n-semiconductor 2 layer consisting of a wide band gap semiconductor; p-type semiconductor layers 5a, 5b formed in the n-semiconductor layer 2 and formed so as to surround the n-semiconductor layer 2 in plan view; a Shottky electrode 3 forming Shottky contact with the n-semiconductor layer 2 and electrically connected to the p-type semiconductor layers 5a, 5b; and a cathode electrode 4 capable of applying potential different from that of the Shottky electrode 3 and electrically connected to the n-semiconductor layer 2. The rectifier element 10 can selects a state where the difference in potential between the Shottky electrode 3 and the cathode electrode 4 changes to apply a current between the Shottky electrode 3 and the cathode electrode 4 and a state where the n-semiconductor layer 2 surrounded by the p-type semiconductor layers 5a, 5b is made into a depletion layer to disconnect a current path between the Shottky electrode 3 and the cathode electrode 4. COPYRIGHT: (C)2007,JPO&INPIT