| 摘要 |
A method for fabricating a semiconductor device is provided to prevent an amorphous carbon layer from being left in a bitline contact region on an active region by patterning a mask necessary for an ion implantation process by an etch process while using an amorphous carbon layer functioning as a hard mask. A gate pattern(116) is formed on an active region(110) of a semiconductor substrate including an underlying structure. An amorphous carbon layer(118) is formed on the resultant structure. A photoresist pattern(120) is formed on the amorphous carbon layer corresponding to a storage electrode contact region on the active region by a photolithography process using an exposure light source selected from a group composed of KrF beam, ArF beam, F2 beam and E beam. By using the photoresist pattern as an etch mask, the amorphous carbon layer under the photoresist pattern is etched to form an amorphous carbon layer pattern in the storage electrode contact region. An ion implantation process is performed on the bitline contact region on the active region by using the amorphous carbon layer pattern as an ion implantation mask.
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