EUV MASK AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an EUV mask capable of overcoming the defects of the EUV mask made by conventional art, and particularly the EUV mask that can be inspected more easily.

SOLUTION: This EUV mask with bump portions and groove portions between the bump portions has at least a substrate with a very low coefficient of thermal expansion, a multilayer consisting of molybdenum and silicon for example, and capping layer consisting of silicon for example. The bump portions of the EUV mask are arranged on the continuous conductive layers.

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