| 摘要 |
PROBLEM TO BE SOLVED: To discretely control back-gate biases together with transistors, while inhibiting junction leakage currents at the source/drain junction. SOLUTION: Impurity ions are implanted partially to a semiconductor substrate 11, wells 12a and 12b are formed to the semiconductor substrate 11, and an insulating layer 13 is formed on the surface of the semiconductor substrate 11. The semiconductor substrate 21 is stuck together on the insulating layer 13 on the semiconductor substrate 11 via a single-crystal semiconductor layer 23, and the semiconductor substrate 21 is peeled from the single-crystal semiconductor layer 23, while using a porous layer 22 as a boundary by ething-removing the porous layer 22. COPYRIGHT: (C)2007,JPO&INPIT
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