| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device, having a color filter with many pixels and improved color reproducibility. SOLUTION: In the solid-state imaging device 102, a p-type semiconductor layer 302, an interlayer insulating film 304, a multilayer film interference filter 306, and a condensing lens 307 are laminated successively on an n-type semiconductor layer 301. A photodiode 303 in which n-type impurities are ion-implanted is formed for each pixel at the side of the interlayer insulating film 304 of the p-type semiconductor layer 302, and a light-shielding film 305 is formed in the interlayer insulating film 304. The multilayer film interference filter 306 has a structure, sandwiching spacer layers 306a, 306b by aλ/4-multilayer film, in which a titanium dioxide layer and a silicon dioxide layer having the same optical film thickness are laminated alternately. The spacer layer has an optical film thickness according to a light color to be transmitted. No spacer layers 306a exist in a green region, two layers of titanium dioxide layers for composing theλ/4-multilayer film are adjacent each other to compose the titanium dioxide layer having an optical film thickness ofλ/2. COPYRIGHT: (C)2007,JPO&INPIT
|
