Extreme ultraviolet mask e.g. absorber mask having elevated sections and trenches, includes substrate with low coefficient of thermal expansion, multilayer and capping layer, where elevated sections are formed on continuous conductive layer

摘要

An extreme ultraviolet (EUV) mask having elevated sections and trenches, comprises a substrate having a very low coefficient of thermal expansion, a multilayer, and a capping layer. The elevated sections of are arranged on a continuous conductive layer. The mask is an absorber mask or an etched multilayer mask. An independent claim is included for producing the extreme ultraviolet mask of an etched multilayer type involving providing a structure having layers of substrate, multilayer, capping layer, buffer layer, absorber layer, and resist layer; writing to the resist layer; subjecting structure to a heat treatment process; developing the resist layer; removing uncovered sections of the absorber layer; removing the resist; examining the structure using a secondary electron microscope (SEM); removing the uncovered sections of the buffer layer; examining the structure to be obtained; repairing the defects possibly present; and final cleaning of the mask.