| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a difference in a rate of change of electric resistance R between a GMR film and a single GMR film due to annealing and a difference between sensors in a thin film magnetic sensor employing the GMR film, so as to suppress degradation in a S/N ratio of the sensor. SOLUTION: The thin film magnetic sensor 10 includes a base film 12, thin film yokes 14 and 16 formed on the base film 12, the GMR film 18 formed in a gap g or in its vicinity, a protective film 20 for protecting surfaces of the thin film yokes 14 and 16 and the GMR film 18, and barrier layers 22 and 24 formed on an interface between the base film 12 and the GMR film 18 and/or an interface between the protective film 20 and the GMR film 18. The GMR film 18 is made of a metal-insulator-based nanogranular material, and the barrier layers 22 and 24 are made of a material containing a fluoride. COPYRIGHT: (C)2007,JPO&INPIT
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