发明名称 |
Methods of processing semiconductor structures and methods of forming capacitors for semiconductor devices using the same |
摘要 |
In a method of processing a semiconductor structure and a method of forming a capacitor for a semiconductor device using the same, a semiconductor structure may be cleaned using a cleaning solution having a surface tension lower than that of water. The semiconductor structure may be dried in an isopropyl alcohol vapor atmosphere.
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申请公布号 |
US2006292817(A1) |
申请公布日期 |
2006.12.28 |
申请号 |
US20060452409 |
申请日期 |
2006.06.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK CHEOL-WOO;KO YONG-SUN;YOON BYOUNG-MOON;KIM KYUNG-HYUN;LEE KWANG-WOOK;RYU CHANG-GIL;HA SUNG-HO;SONG WOO-SUCK;JUN YONG-MYUNG;PARK SEUNG-YUL |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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