发明名称 Methods of processing semiconductor structures and methods of forming capacitors for semiconductor devices using the same
摘要 In a method of processing a semiconductor structure and a method of forming a capacitor for a semiconductor device using the same, a semiconductor structure may be cleaned using a cleaning solution having a surface tension lower than that of water. The semiconductor structure may be dried in an isopropyl alcohol vapor atmosphere.
申请公布号 US2006292817(A1) 申请公布日期 2006.12.28
申请号 US20060452409 申请日期 2006.06.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK CHEOL-WOO;KO YONG-SUN;YOON BYOUNG-MOON;KIM KYUNG-HYUN;LEE KWANG-WOOK;RYU CHANG-GIL;HA SUNG-HO;SONG WOO-SUCK;JUN YONG-MYUNG;PARK SEUNG-YUL
分类号 H01L21/20 主分类号 H01L21/20
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