| 摘要 |
<p>A write method for a nonvolatile semiconductor storage device having a resistance storing element that stores high and low resistance states and switches between them in response to a voltage application, wherein when a voltage is applied to the resistance storing element so as to switch from the high resistance state to the low resistance state, the value of the current flowing through the resistance storing element is specified, thereby causing the resistance storing element to store the low resistance state of a low resistance value in accordance with the specified current value.</p> |
