发明名称 Semiconductor Device and a Method of Manufacturing the Same
摘要 A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.
申请公布号 US2006289998(A1) 申请公布日期 2006.12.28
申请号 US20060458905 申请日期 2006.07.20
申请人 HITACHI ULSI SYSTEMS CO., LTD. 发明人 KANAOKA TAKU;SAHARA MASASHI;FUKAYAMA YOSHIO;EBATA YUTARO;HIGUCHI KAZUHISA;FUJISHIMA KOJI
分类号 H01L23/52;H01L21/3205;H01L21/82;H01L21/822;H01L23/04;H01L23/31;H01L23/485;H01L23/522;H01L23/528;H01L27/04;H01L27/12 主分类号 H01L23/52
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