摘要 |
<p>An apparatus for producing a semiconductor single crystal which comprises a crucible, a heater, a means of operating the crucible, a chamber in which the crucible and heater are housed, and a hydrogen mixture gas feeder with which a hydrogen mixture gas obtained by mixing a hydrogen-containing gas containing hydrogen atoms with an inert gas is supplied to the chamber, wherein the hydrogen mixture gas feeder comprises a hydrogen-containing-gas feeder, an inert-gas feeder, a hydrogen-containing-gas flow regulator, an inert-gas flow regulator, and a gas mixer which evenly mixes the hydrogen-containing gas with the inert gas to produce a hydrogen mixture gas.</p> |
申请人 |
SUMCO CORPORATION;SUGIMURA, WATARU;HOURAI, MASATAKA;ONO, TOSHIAKI |
发明人 |
SUGIMURA, WATARU;HOURAI, MASATAKA;ONO, TOSHIAKI |