DUAL GATE OF SEMICONDUCTOR DEVICE, METHOD FOR FORMING THE DUAL GATE AND METHOD FOR MANUFACTURING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR USING THE FORMING METHOD

摘要

A dual gate of a semiconductor device, a method for forming the same, and a method for manufacturing a complementary metal oxide semiconductor using the same method are provided to suppress a dopant out-diffusion effect of a polysilicon layer under a conductive layer by forming a silicon layer on an upper surface and both sidewalls of the conductive layer as an electrode material of a dual gate. A gate insulating layer(211) is formed on an upper surface of a semiconductor substrate(200). A first silicon layer(212) is formed on an upper surface of the gate insulating layer. A conductive layer(218) is formed on an upper surface of the first silicon layer. A second silicon layer(219) is formed on an upper surface of the gate insulating layer to surround the first silicon layer and the conductive layer.