CHEMICAL MECHANICAL POLISHING MACHINE

摘要

A CMP machine is provided to prevent polishing uniformity by forming a contacting part of a platen pad and a polishing head with a hexagonal shape. A wafer(5) is closely attached on an upper surface of a platen head(1) by a polishing head(3) in a wafer polishing process. The platen pad is attached on an upper surface of a rotatory plate. A slurry supply line is used for supplying slurries including a polishing agent and chemicals to the platen pad in the wafer polishing process. The polishing head contacting the platen pad is formed with a hexagonal shape. A pad conditioner is used for polishing finely the upper surface of the platen pad. A cooling unit(6) controls the temperature of the platen pad due to frictional force in the polishing process.