发明名称 PHOTODIODE AND METHOD FOR MANUFACTURING SAME
摘要 <p>A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.</p>
申请公布号 EP1737047(A1) 申请公布日期 2006.12.27
申请号 EP20050728685 申请日期 2005.04.05
申请人 NEC CORPORATION 发明人 OOHASHI, KEISHI;ISHI, TSUTOMU;BABA, TOSHIO;FUJIKATA, JUNICHI;MAKITA, KIKUO
分类号 H01L31/0216;H01L31/0224;H01L31/108 主分类号 H01L31/0216
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