| 摘要 |
The module comprises a carrier substrate (44) on a basis of alumina which is separated from a ferrite substrate (46) by a ring cavity filled with sealing material (70). All layers combined form a single substrate with metallized surfaces (51,52). The sealing material is also covered with the metallized film for electrical connection within cell. The sealing material is a dielectric paste of e.g. glass type with the coefficient of thermal expansion comparable to those of the carrier and the ferrite substrates. The ferrite substrate is a circular tablet of the same diameter as the corresponding circular opening in the carrier to obtain a perfect fit. The ferrite substrate is fixed in the carrier substrate (Al2O3) before the sealing material is dry, and the single substrate is formed by a heat treatment at 850 degrees C, or by laser (CO2) radiation. The metallization is carried out to a thickness of e.g. 25 micrometers. An Independent claim is also included for a method of manufacturing the high-frequency microelectronic module. |
