| 摘要 |
An RF power amplifier according to the invention comprises a plurality of parallel output transistors (HBT, 1,1 to HBT, 1 ,N) connected to a power supply. A plurality of base resistors (Rb, 1,1 to Rb, 1 ,N) for the output transistors (HBT, 1,1 to HBT, 1 ,N) and a plurality of input capacitors (Cb, 1 to Cb,N), each coupled in parallel to receive an RF signal input and connected via at least one additional passive component to the inputs of each corresponding output transistor (HBT, 1,1 to HBT, 1 ,N), are provided An output for an RF output signal is obtained from the parallel connection of the output transistors (HBT, 1,1 to HBT, 1 ,N). The transistors (HBT, 1,1 to HBT, 1 ,N) are heterojunction bipolar transistors.
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