| 发明名称 |
Fabrication method for phase change diode memory cells |
| 摘要 |
A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes is disclosed. The method includes depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.
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| 申请公布号 |
US7151008(B2) |
申请公布日期 |
2006.12.19 |
| 申请号 |
US20050253233 |
申请日期 |
2005.10.17 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
ASHTON GARY R.;GIBSON GARY A.;BICKNELL-TASSIUS ROBERT N. |
| 分类号 |
G03F7/20;H01L21/06;G11B9/00;G11B9/04;G11B9/10;G11B11/00;G11B11/08 |
主分类号 |
G03F7/20 |
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