发明名称 Multiple etch-stop layer deposition scheme and materials
摘要 Described are methods and structures for mitigating the effects of mechanical stresses placed on the layers of semiconductor devices, and specifically disclosed are methods and structures for mitigating the diminished chemical bonds between etch-stop layers and other semiconductor device layers. The disclosed methods and structures use different structures and/or processes for some of the etch-stop layers in a device.
申请公布号 US7151052(B2) 申请公布日期 2006.12.19
申请号 US20050908142 申请日期 2005.04.28
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HUANG TAI-CHUN;YAO CHIH-HSIANG;CHI KUAN-SHOU;HSIA CHIN-CHIU;LIANG MONG-SONG
分类号 H01L21/4763;H01L23/48 主分类号 H01L21/4763
代理机构 代理人
主权项
地址