| 发明名称 |
INTEGRATED CIRCUIT METAL SILICIDE METHOD |
| 摘要 |
Fluorine containing regions (70) are formed in the source and drain regions (60) of the MOS transistor. A metal layer (90) is formed over the fluorine containing regions (70) and the source and drain regions (60). The metal layer is reacted with the underlying fluorine containing regions to form a metal silicide.
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| 申请公布号 |
KR20060130746(A) |
申请公布日期 |
2006.12.19 |
| 申请号 |
KR20067021452 |
申请日期 |
2005.03.17 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LU JIONG PING;YUE DUOFENG;LIU XIAOZHAN;MILES DONALD S.;ROBERTSON LANCE S. |
| 分类号 |
H01L21/336;H01L21/265;H01L21/285;H01L21/44;H01L21/4763;H01L29/78 |
主分类号 |
H01L21/336 |
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