发明名称 Thin film transistor type display device, method of manufacturing thin film element, thin film transistor circuit board, electro-optical device, and electronic apparatus
摘要 The invention reduces the size of an element chip and reduces the manufacturing cost in a thin film transistor type display device in which thin film transistors are formed on a first substrate, wiring lines are formed on a second substrate, and the element chip, including one or more thin film transistors, is peeled off from the first substrate and transferred to the second substrate. In the patterning process of the thin film transistors, holographic lithography or a dynamic auto focus system is used, a design rule of 1.0 mum or less is used, and only a polycrystalline silicon layer and a first metal layer are used as the wiring lines of the element chip.
申请公布号 US7151044(B2) 申请公布日期 2006.12.19
申请号 US20040764502 申请日期 2004.01.27
申请人 SEIKO EPSON CORPORATION 发明人 KIMURA MUTSUMI;IRIGUCHI CHIHARU
分类号 G09F9/30;H01L21/30;H01L21/02;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 主分类号 G09F9/30
代理机构 代理人
主权项
地址