发明名称 Depositing a pinned layer structure in a self-pinned spin valve
摘要 The pinned layer structure in a self-pinned spin valve is deposited using a DC aligning field. The deposition of each of the Reference and Keeper layer in the pinned layer occurs within two different polarity DC aligning fields. Thus, a first portion of the Reference layer is deposited with a DC alignment field of a first polarity, i.e., either positive or negative, and a second portion of the Reference layer is deposited in a DC alignment field of opposite polarity. The Keeper layer is similarly deposited, with a first portion of the Keeper layer deposited in a first polarity DC alignment field and the second portion deposited in the opposite polarity DC alignment field. By splitting the deposition of the Reference and Keeper layers into portions using DC aligning fields the pinned layer structure is highly repeatable while providing a good thickness uniformity of the structure.
申请公布号 US7151653(B2) 申请公布日期 2006.12.19
申请号 US20040782208 申请日期 2004.02.18
申请人 HITACHI GLOBAL TECHNOLOGIES NETHERLANDS B.V. 发明人 MAURI DANIELE;ZELTSER ALEXANDER M.
分类号 G11B5/127;G11B5/39;H05K7/20 主分类号 G11B5/127
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