发明名称 High density stepped, non-planar flash memory
摘要 A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same column. The second plurality of memory cells are coupled to the first plurality of memory cells through a series connection of their source/drain regions.
申请公布号 US7151294(B2) 申请公布日期 2006.12.19
申请号 US20040910190 申请日期 2004.08.03
申请人 MICRON TECHNOLOGY, INC. 发明人 FORBES LEONARD;AHN KIE Y.
分类号 H01L29/788 主分类号 H01L29/788
代理机构 代理人
主权项
地址