EEPROM DEVICE HAVING SINGLE GATE STRUCTURE, OPERATION METHOD OF THE EEPROM AND FABRICATION METHOD OF THE EEPROM

摘要

An EEPROM with a single gate structure, an operating method thereof and a method for manufacturing the same are provided to prevent the degradation of a read transistor by using read and erase active regions separated from each other. A first and third active regions separated from each other are defined on a semiconductor substrate(10). A common floating gate crosses over the active regions. Source/drain regions(13s,13d) are formed at both sides of the common floating gate within the third active region. A first metal line(51) is connected to the first active region. A second metal line(55) is connected to a second active region. A third metal line is connected to one out of the source/drain regions.