| 摘要 |
A silicon-based IR photodetector [20] is formed within a silicon-on-insulator (SOI) structure [22] by placing a metallic strip [30] (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer [28] (i.e., "planar SOI layer") of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.
|
