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发明名称
具有沟渠结构的半导体元件与方法
摘要
在一实施例中,在一基板中形成一对侧壁钝化沟渠接点,以提供与一表面下特征(sub–surfacefeature)之电接触。在该对侧壁钝化沟渠接点之间扩散一掺杂区域,以提供低电阻接触。
申请公布号
TW200644155
申请公布日期
2006.12.16
申请号
TW095113966
申请日期
2006.04.19
申请人
半导体组件工业公司
发明人
高登M 葛福那;彼得J 德贝尔
分类号
H01L21/76(2006.01)
主分类号
H01L21/76(2006.01)
代理机构
代理人
陈长文
主权项
地址
美国
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