METHOD FOR MANUFACTURING OF CMOS IMAGE SENSOR

摘要

A method for manufacturing a CMOS image sensor is provided to uniformly form a micro lens and to improve characteristics of an image sensor by using an imprint manner. An interlayer dielectric(203) is formed on the whole surface of a semiconductor substrate(201) where plural photo diodes(202) and all sorts of transistors are formed. A color filter layer(204) is formed on the interlayer dielectric to be opposite to each photo diode. A planarization layer(205) is formed on the whole surface including the color filter layer. The planarization layer is selectively removed to form a trench having a predetermined depth from the surface. A photoresist(207) is applied on the whole surface of the semiconductor substrate including the trench. A mold(208) where a lens shape is patterned is aligned to the semiconductor substrate where the photoresist is applied. The mold is overlapped with the semiconductor substrate where the photo resist is applied. A predetermined pressure and heat are given to the mold to transfer the patterned lens shape of the mold to the photo resist. The mold is removed from the semiconductor substrate to form a micro lens in the trench of the planarization layer.