| 摘要 |
The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber (1) which is arranged in a reactor housing and comprises a substrate holder (2) for receiving at least one substrate (8). A gas-admittance body (3) is arranged opposite the substrate holder (2), said body comprising a gas- leak surface (4) facing the substrate holder (2) and provided with a plurality of essentially evenly distributed outlets (5) for process gases to be introduced into the process chamber (1). In order to improve the observation of the surface temperature, the inventive device is provided with a plurality of sensors (10) arranged to the rear of the outlets (5) and respectively aligned with an associated outlet (5).
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