METHOD FOR FABRICATING IMAGE SENSOR

摘要

A method for manufacturing an image sensor is provided to completely remove a color resist with a simple operation such as changing spray time of a remover chemical. A wafer divided into a pixel array unit(P) and a logic circuit unit(L) is provided. A wire is formed on the wafer. An interlayer dielectric(161) is formed on the whole surface including the wire. A pad electrode(153) is formed on the interlayer dielectric of the logic circuit unit. A protective layer(165) is formed on the whole surface including the pad electrode. The protective layer on an upper portion of the pad electrode is selectively removed to form a via hole. A color photoresist is applied on the protective layer and is patterned to form a color filter layer. The color filter layer is removed by using a chemical. The color filter layer is reworked on the protective layer. A planarization layer is formed to cover the color filter layer. A micro lens is formed on the planarization layer to be corresponded to the color filter layer.