| 摘要 |
<p>A semiconductor apparatus and a manufacturing method thereof are provided to increase current driving capacity of a MOSFET by reducing an effective width of an isolation unit and increasing a channel width. A first dielectric is formed on a semiconductor substrate(10). An isolation unit(16) is formed in the first dielectric and the semiconductor substrate. The first dielectric is removed so that a part of the isolation unit is projected from the semiconductor substrate. A width of the isolation unit in the part projected from the semiconductor substrate is reduced. A semiconductor layer(18) is formed on the semiconductor substrate in a region between the isolation units. A second dielectric is formed on semiconductor layer. A conductive layer is formed on the second dielectric. The conductive layer is processed to form a gate electrode.</p> |
