| 摘要 |
<P>PROBLEM TO BE SOLVED: To control a source voltage level of a driver transistor for the unit of a memory cell column in a static semiconductor memory device. <P>SOLUTION: In a memory cell (MC), driver transistor source contacts (DV1, DV2) are short-circuited by internal metal wiring (9b). The metal wiring (9b) is separated from a memory cell of an adjacent column, and extends in a zigzag shape in the direction of memory cell columns. A line for transmitting a driver transistor source voltage can be individually disposed for each column and even in a single port memory cell structure, the driver transistor source voltage can be regulated for the unit of a memory cell column. <P>COPYRIGHT: (C)2007,JPO&INPIT |
