| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device realizing both of the reduction of silicide resistance and the suppression of leak of connection, and to provide its manufacturing method. SOLUTION: A field oxide film 102 is formed on a semiconductor substrate 101 while a gate oxide film 103 and a gate electrode 104 are formed in an active region. Next, a low concentration diffusion layer 105 is formed on the gate electrode 104 through self-alignment. Subsequently, a silicon oxide film 106a is deposited on the whole surface of the semiconductor substrate 101 to apply whole surface etch back and form a side wall spacer 106. In this case, the side wall spacer 106 is formed so as to be small in a region pinched by the gate electrode 104. Next, a high concentration diffusion layer 107 is disposed in self-alignment with respect to the side wall spacer 106. Subsequently, an Ni film 108 is deposited on the whole surface of the semiconductor substrate 101, and RTA (rapid thermal annealing) treatment is applied to form a nickel silicide film 109 on the upper part of the gate electrode 104 and the upper part of the diffusion layer through self-alignment. COPYRIGHT: (C)2007,JPO&INPIT
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