The invention relates to a doping mixture for coating semiconductor substrates which are then subjected to a high-temperature treatment to form a doped layer. The invention further relates to a method for producing such a doping mixture and the use thereof.
申请公布号
WO2006131251(A1)
申请公布日期
2006.12.14
申请号
WO2006EP05195
申请日期
2006.05.31
申请人
CENTROTHERM PHOTOVOLTAICS AG;FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E. V.;BIRO, DANIEL;VOYER, CATHERINE;WANKA, HARALD;KORIATH, JOERG
